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Small Signal and Power Evaluation of Novel BiCMOS Compatible, Short Channel LDMOS Technology
Högskolan i Gävle, Institutionen för teknik och byggd miljö, Ämnesavdelningen för elektronik.
2003 (engelsk)Inngår i: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 51, nr 3, s. 1052-1056Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We describe a very short-channel 0.15-mum LDMOS transistor with a breakdown voltage of up to 60 V, manufactured in a standard 0.35-mum BiCMOS process. At 1900 MHz and a 12-V supply voltage, the 0.4-mm-gatewidth device with shortest drain drift region gives 100-mW output power P-1 dB at a drain efficiency of 43%. It has a transducer power gain of over 20 dB. The maximum current gain cutoff frequency f(T) is 15 GHz, and the maximum available gain cutoff frequency f(MAX) is 38 GHz. We show the dependence of f(T), an f(MAX) of gate and drain bias for transistors with different-drain drift region length. The LDMOS process module does not affect the performance or the models of other devices. We present for the first time a simple way to create high-voltage high-performance LDMOS transistors for an RF power amplifier use even in a very downscaled silicon technology.

sted, utgiver, år, opplag, sider
2003. Vol. 51, nr 3, s. 1052-1056
Emneord [en]
BiCMOS integrated circuits, high-frequency (HF) amplifiers, LDMOS, microwave power FETs, MOSFET power amplifiers
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Identifikatorer
URN: urn:nbn:se:hig:diva-2673DOI: 10.1109/TMTT.2003.808697ISI: 000182000700050OAI: oai:DiVA.org:hig-2673DiVA, id: diva2:119335
Tilgjengelig fra: 2007-10-05 Laget: 2007-10-05 Sist oppdatert: 2018-03-13bibliografisk kontrollert

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