hig.sePublikasjoner
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard-cite-them-right
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • sv-SE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • de-DE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap
Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.
Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.ORCID-id: 0000-0003-2887-049X
Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
Vise andre og tillknytning
1998 (engelsk)Inngår i: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 170, nr 2, s. 317-321Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report Reflectance Difference (RD) measurement on (001) GaAs surface quantum wells (QW) under Ultra High Vacuum (UHV) conditions from 1.7 to 5.0eV. The QW is embedded between an arsenic-rich reconstructed GaAs surface and an AlAs barrier. The samples, grown by MBE with a protective arsenic cap layer, were heated to 320 and 430°C to desorb the As layer and form c(4 x 4) and (2 x 4) surface reconstructions, respectively. By modifying the surface reconstructure, we are able to separate the contributions to the optical anisotropy from the surface region (mainly associated with the As dimers) from those originating below the surface.

sted, utgiver, år, opplag, sider
1998. Vol. 170, nr 2, s. 317-321
Emneord [en]
Energy gap; Molecular beam epitaxy; Reflection; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor growth; Spectroscopy; Surface treatment, Aluminum arsenide; Optical anisotropy; Reflectance difference spectroscopy, Semiconductor quantum wells
HSV kategori
Identifikatorer
URN: urn:nbn:se:hig:diva-23222DOI: 10.1002/(SICI)1521-396X(199812)170:2<317::AID-PSSA317>3.0.CO;2-VISI: 000077866100020Scopus ID: 2-s2.0-0032302760OAI: oai:DiVA.org:hig-23222DiVA, id: diva2:1062849
Tilgjengelig fra: 2017-01-09 Laget: 2017-01-05 Sist oppdatert: 2018-03-13bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Rönnow, Daniel

Søk i DiVA

Av forfatter/redaktør
Rönnow, Daniel
I samme tidsskrift
Physica status solidi. A, Applied research

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 208 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard-cite-them-right
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • sv-SE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • de-DE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf