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Novell BiCMOS Compatible, Short Channel LDMOS Technology for Medium Voltage RF & Power Applications
Högskolan i Gävle, Institutionen för teknik och byggd miljö, Ämnesavdelningen för elektronik.
2002 (engelsk)Inngår i: IEEE MTT-S Digest, 2002, s. 35-38Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

We describe a very short channel, 0.15 μm, LDMOS transistor, with a breakdown voltage of up to 45 V, manufactured in a standard 0.35 μm BiCMOS process. At 1900 MHz and a 12V supply voltage the 0.4mm gate width device gives 100 mW output power P1 dB at a drain efficiency of 43%. It has a transducer power gain of more than 20dB and a current gain cutoff frequency, fT, of 13 GHz. The maximum available gain cutoff frequency, fMAX, is 27 GHz. The LDMOS process module does not affect the performance or models of other devices. We present for the first time a simple way to create high voltage, high performance LDMOS transistors for RF power amplifier use even in a very downscaled silicon technology.

sted, utgiver, år, opplag, sider
2002. s. 35-38
Emneord [en]
LDMOS
HSV kategori
Identifikatorer
URN: urn:nbn:se:hig:diva-2674OAI: oai:DiVA.org:hig-2674DiVA, id: diva2:119336
Konferanse
IEEE MTT-S, Seattle, USA, June 2002
Tilgjengelig fra: 2007-10-05 Laget: 2007-10-05 Sist oppdatert: 2018-03-13bibliografisk kontrollert

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