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Increased efficiency in RF-power SOI-LDMOS transistors
Högskolan i Gävle, Institutionen för teknik och byggd miljö, Ämnesavdelningen för elektronik.
2009 (engelsk)Inngår i: EUROSOI 2009 - Conference Proceedings: Fifth Workshop of the Thematic Network on Silicon-On-Insulator, Technology, Devices and Circuits, 2009, s. 117-118Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

The effect of substrate resistivity on efficiency in high-power operation of high-frequency SOI-LDMOS transistors is for the first time investigated using computational load-pull simulations. Identical SOI-LDMOS transistors have been studied on different substrate resistivities. Their highpower performance has been compared to previous investigations concerning the off-state ROUT to high-efficiency relation. It is shown that albeit high off-state ROUT is a good indication it may not always be sufficient for high efficiency operation. The bias and frequency dependency of the coupling through the substrate makes a more detailed on-state analysis necessary. It is shown that very low resistivity and high resistivity SOI-substrates both result in high efficiency at the studied frequency and bias-point. It is also shown thata normally doped, medium resistivity, substrate results in significantly lower efficiency.

 

 

 

 

 

 

 

sted, utgiver, år, opplag, sider
2009. s. 117-118
Emneord [en]
SOI, Load-Pull, Power Amplifier
HSV kategori
Identifikatorer
URN: urn:nbn:se:hig:diva-3690OAI: oai:DiVA.org:hig-3690DiVA, id: diva2:158858
Tilgjengelig fra: 2009-02-04 Laget: 2009-02-04 Sist oppdatert: 2018-03-13bibliografisk kontrollert

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