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Investigation of SOI-LDMOS for RF-Power Applications Using Computational Load Pull
Högskolan i Gävle, Institutionen för teknik och byggd miljö, Ämnesavdelningen för elektronik.
Solid State Electronics, Ångström Laboratory, Uppsala University, Uppsala, Sweden.
Solid State Electronics, Ångström Laboratory, Uppsala University, Uppsala, Sweden.
2009 (Engelska)Ingår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 56, nr 3, s. 505-511Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Small-signal and computational load-pull simulations are used to investigate the effect of substrate resistivity on efficiency in high-power operation of high-frequency silicon-on insulator-LDMOS transistors. Identical transistors are studied on substrates with different resistivities. Using computational load pull, their high-power performance is evaluated. The results are compared to previous investigations, relating the OFF-state out put resistance to high-efficiency operation. From the large-signal simulation, an output circuit model based on a load-line match is extracted with parameters traceable from small-signal simu lations. It is shown that, albeit high OFF-state output resistance is a good indication, it is not sufficient for high efficiency in a high-power operation. The bias and frequency dependence of the coupling through the substrate makes a more detailed ON-state analysis necessary. It is shown that very low resistivity and high resistivity SOI substrates both result in a high efficiency at the studied frequency and bias point. It is also shown that a normally doped medium-resistivity substrate results in a significantly lower efficiency.

Ort, förlag, år, upplaga, sidor
IEEE , 2009. Vol. 56, nr 3, s. 505-511
Nyckelord [en]
LDMOS, RF power, silicon-on-insulator (SOI)
Nationell ämneskategori
Annan elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:hig:diva-3692DOI: 10.1109/TED.2008.2011848ISI: 000264019300019Scopus ID: 2-s2.0-62749086718OAI: oai:DiVA.org:hig-3692DiVA, id: diva2:158862
Tillgänglig från: 2009-02-04 Skapad: 2009-02-04 Senast uppdaterad: 2018-03-13Bibliografiskt granskad

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Bengtsson, Olof

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