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Sideband asymmetries in RF Power LDMOS Before and After Digital Predistortion
Högskolan i Gävle, Institutionen för teknik och byggd miljö, Ämnesavdelningen för elektronik. (Elektronik)
Högskolan i Gävle, Institutionen för teknik och byggd miljö, Ämnesavdelningen för elektronik. (Elektronik)
Högskolan i Gävle, Radio Center Gävle.
Infineon Technologies.
2009 (engelsk)Konferansepaper, Publicerat paper (Annet vitenskapelig)
Abstract [en]

 The merging of the fields of RF engineering and signal processing has introduced concepts such as behavioral modeling and enabled digital linearization schemes for wireless devices, such as power amplifiers (PAs). Despite that this process has been going on for a number of years much work remains to be done. The links between physical behavior and mathematical models are far from well-understood as are the optimum strategies for device design. This study focus on digital predistortion properties of a one-stage PA consisting of a power transistor mounted in a test fixture. The device under test (DUT) is an Infineon PTF210451E, a 45W transistor intended for usage in the frequency bands 2010-2025 MHz and 2110-2170 MHz. The test fixture is also designed by Infineon Technologies.  The signal types used in the measurements are single and double carrier wideband code division multiple access (WCDMA) signals. The double carrier WCDMA signals have tone-spacings of 5, 10 and 15 MHz. Normal two-tone measurements are also presented. 

sted, utgiver, år, opplag, sider
2009.
HSV kategori
Identifikatorer
URN: urn:nbn:se:hig:diva-11176OAI: oai:DiVA.org:hig-11176DiVA, id: diva2:471223
Konferanse
Radio Frequency Measurement Technology Conference
Tilgjengelig fra: 2012-01-03 Laget: 2012-01-02 Sist oppdatert: 2018-03-13bibliografisk kontrollert

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Landin, PerIsaksson, MagnusKeskitalo, Niklas

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