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Investigation of GaN-HEMT Based Switches for Hybrid Switching Amplifier Supply-Modulators
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik.
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik.
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik.
Högskolan i Gävle, Akademin för teknik och miljö, Avdelningen för elektronik, matematik och naturvetenskap, Elektronik. (Elektronik)
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2012 (engelsk)Inngår i: Frequenz, ISSN 0016-1136, E-ISSN 2191-6349, Vol. 66, nr 11-12, s. 339-345Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

An investigation of GaN-HEMT based switching stages in hybrid switching amplifiers (HSA) for wide-bandwidth supply modulation of RF power amplifiers is presented. The HSA is designed for maximum 15 V supply voltage, 1 A supply current and 10 MHz bandwidth. GaN-HEMT switch designs with alternative gate drive circuitry are investigated with regard to power, efficiency and linearity under different load conditions using simulations and measurements of the fabricated circuits. The full HSA showed an efficiency of 49.7% for a WCDMA envelope. A modified switching stage with improved gate-drive circuitry shows 85% efficiency in a 15 V buck-converter test-circuit for a 10 V conversion at 1 MHz over a 15 Ω load.

sted, utgiver, år, opplag, sider
2012. Vol. 66, nr 11-12, s. 339-345
Emneord [en]
EER; envelope tracking; hybrid switching amplifiers; power amplifiers supply modulation
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Identifikatorer
URN: urn:nbn:se:hig:diva-13680DOI: 10.1515/freq-2012-0100ISI: 000313934700004Scopus ID: 2-s2.0-84876539513OAI: oai:DiVA.org:hig-13680DiVA, id: diva2:599061
Tilgjengelig fra: 2013-01-22 Laget: 2013-01-22 Sist oppdatert: 2018-03-13bibliografisk kontrollert

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