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Behavioral modeling of outphasing amplifiers considering memory effects
Högskolan i Gävle, Akademin för teknik och miljö, Avdelningen för elektronik, matematik och naturvetenskap, Elektronik. Chalmers University of Technology, Gothenburg, Sweden .
Chalmers University of Technology, Gothenburg, Sweden.
Ericsson AB; Linköping University.
Linköping University.
2013 (engelsk)Inngår i: 2013 IEEE MTT-S International Microwave Symposium Digest, IEEE conference proceedings, 2013, artikkel-id 6697764Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

This paper proposes a behavioral model structure for outphasing amplifiers. The model performance is evaluated on a class-D CMOS outphasing amplifier and compared with two models found in the literature. The proposed model structure also allows the use of memory in a parallel Hammerstein-like setting. The proposed models show improvements in adjacent channel error power ratio (ACEPR) of approximately 5 dB in addition to being linear in the parameters. The lower model errors enable the use and design of improved predistorters taking frequency dependency (memory effects) in outphasing amplifiers into account. 

sted, utgiver, år, opplag, sider
IEEE conference proceedings, 2013. artikkel-id 6697764
Serie
IEEE MTT-S International Microwave Symposium Digest, ISSN 0149-645X
Emneord [en]
CMOS, Nonlinear distortion, Power amplifier, Predistortion, Adjacent channels, Behavioral model, Frequency dependencies, Memory effects, Model errors, Model performance, Pre-distortion, Predistorters, CMOS integrated circuits, Power amplifiers
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Identifikatorer
URN: urn:nbn:se:hig:diva-17937DOI: 10.1109/MWSYM.2013.6697764ISI: 000369754300433Scopus ID: 2-s2.0-84893322647ISBN: 978-146736176-7 (tryckt)OAI: oai:DiVA.org:hig-17937DiVA, id: diva2:762221
Konferanse
2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013, 2-7 June 2013, Seattle, WA
Tilgjengelig fra: 2014-11-11 Laget: 2014-11-11 Sist oppdatert: 2018-03-13bibliografisk kontrollert

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