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High Power Combiner/Divider Design for Dual Band RF Power Amplifiers
Indiana University - Purdue University Fort Wayne, Fort Wayne, USA.
Högskolan i Gävle, Akademin för teknik och miljö, Avdelningen för elektronik, matematik och naturvetenskap, Elektronik. ACCESS Linnaeus Centre, Signal Processing Dept, KTH Royal Institute of Technology, Stockholm, Sweden.ORCID-id: 0000-0003-1183-6666
Indiana University - Purdue University Fort Wayne, Fort Wayne, USA..
Indiana University - Purdue University Fort Wayne, Fort Wayne, USA..
Vise andre og tillknytning
2015 (engelsk)Inngår i: Proceedings of the 2015 International Conference on Electromagnetics in Advanced Applications: ICEAA 2015, IEEE Press, 2015, s. 1036-1039Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Design of low loss with an enhanced thermal profile power divider/combiner for high power dual-band Radio Frequency (RF) power amplifier applications is given. The practical implementation, low loss and substrate characteristics make this type of combiner ideal for high power microwave applications. The combiner operational frequencies are chosen to operate at 900 MHz and 2.14 GHz, which are common frequencies for concurrent dual band RF power amplifiers. The analytical results are verified with simulation results for various cases and agreement has been observed on all of them.

sted, utgiver, år, opplag, sider
IEEE Press, 2015. s. 1036-1039
Emneord [en]
amplifier, combiner, divider, dual band, Radio Frequency
HSV kategori
Identifikatorer
URN: urn:nbn:se:hig:diva-20246DOI: 10.1109/ICEAA.2015.7297272ISI: 000378428800197Scopus ID: 2-s2.0-84955502943ISBN: 978-147997806-9 (tryckt)OAI: oai:DiVA.org:hig-20246DiVA, id: diva2:852846
Konferanse
17th International Conference on Electromagnetics in Advanced Applications, ICEAA 2015, 7-11 September 2015, Torino, Italy
Merknad

Article number: 7297272

Tilgjengelig fra: 2015-09-10 Laget: 2015-09-10 Sist oppdatert: 2018-03-13bibliografisk kontrollert

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