Digital Predistortion of Single and Concurrent Dual Band Radio Frequency GaN Amplifiers with Strong Nonlinear Memory Effects
2016 (English)In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670Article in journal (Refereed) Accepted
Electrical anomalies due to trapping effects in Gallium Nitride (GaN) power amplifiers (PAs)give rise to long-term or strong memory effects. We propose novel models based on infinite impulse response (IIR) fixed pole expansion techniques for the behavioural modeling and digital pre-distortion of single-input-single-output (SISO) and concurrent dual-bandGaN PAs. Experimental results show that the proposed models outperform the corresponding finite impulse response (FIR) models by up to 17 dB for the same number of model parameters. For the linearization of a SISO GaN PA the proposed models give adjacent channel power ratios (ACPRs) that are 7 to 17 dBlower than the FIR models. For the concurrent dual-band case, the proposed models give ACPRs that are 9to 14 dB lower than the FIR models.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2016.
IdentifiersURN: urn:nbn:se:hig:diva-23117OAI: oai:DiVA.org:hig-23117DiVA: diva2:1058027