The strip coating material, Opticlean, which has been reformulated, has been shown to remove 1-5-mu m-diameter particles as well as contamination remaining from previous drag wipe cleaning on a used silicon wafer. In addition, no residue that produced scattering was found on a fresh silicon wafer when Opticlean was applied and then stripped off. The total integrated scattering technique used for the measurements could measure scattering levels of He-Ne laser light as low as a few ppm (parts in 106), corresponding to a surface roughness of <1 Angstrom rms.