Optical anisotropy of (001)-GaAs surface quantum wells
2001 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 64, no 24, 2453031-2453038 p., 245303Article in journal (Refereed) Published
We report a reflectance difference spectroscopy (RDS) study of the optical anisotropy of GaAs:(001) surface quantum wells consisting of a thin GaAs layer (3-30 nm thick) embedded between an arsenic reconstructed surface and an AlAs barrier. The RDS spectra display anisotropic contributions from the free surface and from the GaAs/AlAs interface. By comparing RDS spectra for the c(4×4) and (2×4) surface reconstructions, we separate these two contributions, and demonstrate that the anisotropy around the E1 and E1+Δ1 transitions comprises a component originating from modifications of bulk states near the surface. The latter is attributed to anisotropic strains induced by the surface reconstruction. The experimental data are well described by a model for the RDS response of the multilayer structures, which also takes into account the blue energy shifts and the changes in oscillator strength of the E1 and E1+Δ1 transitions induced by quantum-well confinement.
Place, publisher, year, edition, pages
2001. Vol. 64, no 24, 2453031-2453038 p., 245303
arsenic; gallium arsenide, anisotropy; article; energy; optics; oscillator; quantum mechanics; reflectometry; surface property
IdentifiersURN: urn:nbn:se:hig:diva-23221DOI: 10.1103/PhysRevB.64.245303ISI: 000173082500055ScopusID: 2-s2.0-0035894507OAI: oai:DiVA.org:hig-23221DiVA: diva2:1062371