Yttrium hydride layer with switchable microwave properties
2004 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 467, no 1-2, 186-189 p.Article in journal (Refereed) Published
We report on switching properties in the microwave region of yttrium hydride. A microstrip line of gold on a quartz substrate was used. A gap in the gold had an yttrium hydride layer of 1.0 ÎŒm thickness with a cap layer of 5 nm palladium and 2 nm aluminium oxide. The yttrium hydride was switched between a metallic and a semiconducting state with the exchange of hydrogen. The transmission (S21) and reflection (S11) coefficients were measured in the range 10 MHz-20 GHz. In the metallic state, the sample works like a microwave transmission line and in its semiconducting state, like a microwave resistor. The transmission coefficient was also measured at 5.0 GHz during hydrogenation and de-hydrogenation.
Place, publisher, year, edition, pages
2004. Vol. 467, no 1-2, 186-189 p.
Dehydrogenation; Electromagnetic wave reflection; Electromagnetic wave transmission; Frequencies; Hydrides; Hydrogenation; Lithography; Microstrip lines; Microwave devices; Microwaves; Reaction kinetics, Metal hydrides; Microwave transmission lines; Switchable microwave properties; Transmission coefficients, Yttrium compounds
Physical Sciences Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:hig:diva-23224DOI: 10.1016/j.tsf.2004.03.039ISI: 000224185100031ScopusID: 2-s2.0-4444221734OAI: oai:DiVA.org:hig-23224DiVA: diva2:1062380