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Deformation potentials of the E1 transition in Ge, GaAs, InP, ZnSe, and ZnTe from ab initio calculations
Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.ORCID iD: 0000-0003-2887-049X
Institute of Physics and Astronomy, Århus University, Århus, Denmar.
Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
1999 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 59, no 8, 5575-5580 p.Article in journal (Refereed) Published
Abstract [en]

The deformation potentials D1 1, D3 3, D1 5, and D3 5, which represent the effects of strain on the E1 electronic interband transitions, have been calculated for Ge, GaAs, InP, ZnSe, and ZnTe using the full-potential linear muffin-tin orbital method within the local-density approximation. These deformation potentials exhibit no strong variations between L and Γ throughout the Brillouin zone. It is therefore legitimate to use an average to interpret strain-optical experiments. The values of these deformation potentials are approximately the same for all calculated materials. The agreement with experimental data is good for Ge, GaAs, and InP. For ZnSe and ZnTe the agreement with the few extant experimental data is poorer: The magnitude of the calculated deformation potentials is smaller than found experimentally. This may reflect a breakdown of the conventional theory of strain optical constants based on one-electron interband transitions. The corresponding deformation potentials, D1,0 5 and D3,0 5, representing the effects of optical phonons at the center of the Brillouin zone on the E1 transitions are also presented.

Place, publisher, year, edition, pages
1999. Vol. 59, no 8, 5575-5580 p.
National Category
Physical Sciences
URN: urn:nbn:se:hig:diva-23225ScopusID: 2-s2.0-4243653692OAI: oai:DiVA.org:hig-23225DiVA: diva2:1062385
Available from: 2017-01-05 Created: 2017-01-05 Last updated: 2017-01-05Bibliographically approved

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