Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap
1998 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 170, no 2, 317-321 p.Article in journal (Refereed) Published
We report Reflectance Difference (RD) measurement on (001) GaAs surface quantum wells (QW) under Ultra High Vacuum (UHV) conditions from 1.7 to 5.0eV. The QW is embedded between an arsenic-rich reconstructed GaAs surface and an AlAs barrier. The samples, grown by MBE with a protective arsenic cap layer, were heated to 320 and 430Â°C to desorb the As layer and form c(4 x 4) and (2 x 4) surface reconstructions, respectively. By modifying the surface reconstructure, we are able to separate the contributions to the optical anisotropy from the surface region (mainly associated with the As dimers) from those originating below the surface.
Place, publisher, year, edition, pages
1998. Vol. 170, no 2, 317-321 p.
Energy gap; Molecular beam epitaxy; Reflection; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor growth; Spectroscopy; Surface treatment, Aluminum arsenide; Optical anisotropy; Reflectance difference spectroscopy, Semiconductor quantum wells
Physical Sciences Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:hig:diva-23222DOI: 10.1002/(SICI)1521-396X(199812)170:2<317::AID-PSSA317>3.0.CO;2-VISI: 000077866100020ScopusID: 2-s2.0-0032302760OAI: oai:DiVA.org:hig-23222DiVA: diva2:1062849