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Dual band Frequency Selective Surface for X-band applications
Department of Electronics and Communication Engineering, Amity School of Engineering and Technology, Amity University, Noida, Uttar Pradesh, India; Department of Electronics and Communication Engineering, BSAITM, Faridabad, Haryana, India.
Department of Electronics and Communication Engineering, Amity School of Engineering and Technology, Amity University, Noida, Uttar Pradesh, India.
University of Gävle, Faculty of Engineering and Sustainable Development, Department of Electronics, Mathematics and Natural Sciences, Electronics.ORCID iD: 0000-0003-2887-049x
2016 (English)In: Progress in Electromagnetic Research Symposium (PIERS): Proceedings 2016, IEEE, 2016, p. 5039-5042, article id 7735828Conference paper, Published paper (Refereed)
Abstract [en]

In this paper, a novel dual band pass Frequency Selective Surface (FSS) is presented. The FSS is a L9 shaped structure with dimensions 7 × 7mm2 and substrate thickness h = 0.762 mm. The proposed FSS aims to provide dual pass-bands in X-band. A stacked array FSS is also studied to broaden the transmission band of the structure. An equivalent circuit model is also given for analyzing the frequency characteristics of the proposed design. The simulation results and the results of equivalent circuit model are in synchronization with each other. HFSS software is used for simulation process and Agilent’s ADS software has been used to get the results of Equivalent Circuit model.

Place, publisher, year, edition, pages
IEEE, 2016. p. 5039-5042, article id 7735828
Keywords [en]
Circuit simulation; Circuit theory; Computer software; Frequency selective surfaces, Dual-band frequency selective surfaces; Equivalent circuit model; Frequency characteristic; Frequency selective surface (FSS); Shaped structures; Simulation process; Substrate thickness; Transmission band, Equivalent circuits
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:hig:diva-23237DOI: 10.1109/PIERS.2016.7735828ISI: 000400013904183Scopus ID: 2-s2.0-85006733672ISBN: 978-1-5090-6093-1 (print)OAI: oai:DiVA.org:hig-23237DiVA, id: diva2:1062974
Conference
2016 Progress In Electromagnetics Research Symposium, PIERS 2016, 8-11 August 2016, Shanghai, China
Available from: 2017-01-09 Created: 2017-01-05 Last updated: 2022-09-19Bibliographically approved

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Rönnow, Daniel

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