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Design of a Low-Noise Amplifier for Radar Application in the 5 GHz Frequency Band
University of Gävle, Faculty of Engineering and Sustainable Development, Department of Electronics, Mathematics and Natural Sciences, Electronics.
2017 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

The purpose of this project was to design and manufacture a Low-Noise Amplifier (LNA) working at a 5 GHz frequency band, by using High Electron Mobility Transistor (HEMT) from Avago Technologies. To improve our design, it was necessary to build a two-stage amplifier; one stage to work in minimum noise sensitivity, and another stage to get the maximum gain achievable by the transistor. This thesis work was carried out as a part of the UAV (Unmanned Aerial Vehicle) system project developed by a research group at the Radio communication and Microwave Electronics department, UMH.The project was designed and simulated using Agilent ADS (Advanced Design System) software.

Place, publisher, year, edition, pages
2017. , 49 p.
National Category
Telecommunications
Identifiers
URN: urn:nbn:se:hig:diva-24570OAI: oai:DiVA.org:hig-24570DiVA: diva2:1115519
External cooperation
Miguel Hernandez University of Elche
Subject / course
Electronics
Educational program
Electronics/Telecommunications – master’s programme (two years) (swe or eng)
Supervisors
Examiners
Available from: 2017-07-03 Created: 2017-06-27 Last updated: 2017-07-03Bibliographically approved

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CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf