hig.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard-cite-them-right
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • sv-SE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • de-DE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
A Computational Load-Pull Method with Harmonic Loading for High-Efficiency Investigations
University of Gävle, Department of Technology and Built Environment, Ämnesavdelningen för elektronik.
The Ångström Laboratory, Solid State Electronics, Uppsala University, Uppsala, Sweden.
The Ångström Laboratory, Solid State Electronics, Uppsala University, Uppsala, Sweden.
2009 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 53, no 1, 86-94 p.Article in journal (Refereed) Published
Abstract [en]

In this paper a method for TCAD evaluation of RF-power transistors in highefficiency operation using harmonic loading is presented. The method is based on large signal timedomain

computational load-pull. Active loads are used in the harmonic load-pull for simulation time reduction. With the method device performance under different harmonic load impedance can

be investigated at an early stage in the design process. Alternative designs can be compared and the mechanisms affecting device efficiency in class-F can be studied at chip level. For method validation a case study is made on an LDMOS transistor. The transistor is load-pulled in class-AB and then optimized for efficiency at 2f0 and 3f0 using a novel approach with passive fundamental load and active harmonic loads. A swept simulation is conducted using passive fundamental and

harmonic loads. Waveforms in compression are analyzed and the mechanisms creating the increased efficiency for in class-F are indentified by a comparative study of class-AB. Class-F harmonic termination is shown to give a 17 % overall reduction of dissipated power and a 9 % increase in output power. The expected efficiency increase is about 3-10 % in the compression

region depending on level of compression.

Place, publisher, year, edition, pages
Elsevier , 2009. Vol. 53, no 1, 86-94 p.
Keyword [en]
Load-Pull, RF-Power, Power amplifiers, TCAD
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:hig:diva-2234DOI: 10.1016/j.sse.2008.10.005ISI: 000262552200015Scopus ID: 2-s2.0-57449104665OAI: oai:DiVA.org:hig-2234DiVA: diva2:118896
Available from: 2008-10-13 Created: 2008-10-13 Last updated: 2016-10-27Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Bengtsson, Olof
By organisation
Ämnesavdelningen för elektronik
In the same journal
Solid-State Electronics
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 985 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard-cite-them-right
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • sv-SE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • de-DE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf