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Novell BiCMOS Compatible, Short Channel LDMOS Technology for Medium Voltage RF & Power Applications
University of Gävle, Department of Technology and Built Environment, Ämnesavdelningen för elektronik.
2002 (English)In: IEEE MTT-S Digest, 2002, 35-38 p.Conference paper, Published paper (Refereed)
Abstract [en]

We describe a very short channel, 0.15 μm, LDMOS transistor, with a breakdown voltage of up to 45 V, manufactured in a standard 0.35 μm BiCMOS process. At 1900 MHz and a 12V supply voltage the 0.4mm gate width device gives 100 mW output power P1 dB at a drain efficiency of 43%. It has a transducer power gain of more than 20dB and a current gain cutoff frequency, fT, of 13 GHz. The maximum available gain cutoff frequency, fMAX, is 27 GHz. The LDMOS process module does not affect the performance or models of other devices. We present for the first time a simple way to create high voltage, high performance LDMOS transistors for RF power amplifier use even in a very downscaled silicon technology.

Place, publisher, year, edition, pages
2002. 35-38 p.
Keyword [en]
LDMOS
National Category
Control Engineering
Identifiers
URN: urn:nbn:se:hig:diva-2674OAI: oai:DiVA.org:hig-2674DiVA: diva2:119336
Conference
IEEE MTT-S, Seattle, USA, June 2002
Available from: 2007-10-05 Created: 2007-10-05 Last updated: 2012-02-21Bibliographically approved

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