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Optimization of High-Voltage RF Power SiGe Transistors for Cellular Applications
University of Gävle, Department of Technology and Built Environment, Ämnesavdelningen för elektronik.
University of Gävle, Department of Technology and Built Environment, Ämnesavdelningen för elektronik.
1999 (English)In: High Power Microwave Electronics: Measurements, Identification, Applications, 1999. MIA-ME '99. Proceedings of the IEEE-Russia Conference, 1999Conference paper, Published paper (Refereed)
Abstract [en]

The base profile design for high-voltage RF power silicon transistors with epitaxial SiGe base was studied using 2-D process and device simulations. The addition of Ge in the base makes thin base widths with very high base doping possible. This gives rise to a higher maximum oscillation frequency thus improving the critical power gain for these devices

Place, publisher, year, edition, pages
1999.
Keywords [en]
SiGe, RF-Power
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:hig:diva-2677DOI: 10.1109/MIAME.1999.827839ISBN: 5-7782-0270-9 (print)OAI: oai:DiVA.org:hig-2677DiVA, id: diva2:119339
Conference
MIA-ME '99, 21-23 sep 1999, Novosibirsk , Russia
Available from: 2007-10-05 Created: 2007-10-05 Last updated: 2018-03-13Bibliographically approved

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Bengtsson, OlofNordlander, Edvard

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