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Investigation of SOI-LDMOS for RF-Power Applications Using Computational Load Pull
University of Gävle, Department of Technology and Built Environment, Ämnesavdelningen för elektronik.
Solid State Electronics, Ångström Laboratory, Uppsala University, Uppsala, Sweden.
Solid State Electronics, Ångström Laboratory, Uppsala University, Uppsala, Sweden.
2009 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 56, no 3, p. 505-511Article in journal (Refereed) Published
Abstract [en]

Small-signal and computational load-pull simulations are used to investigate the effect of substrate resistivity on efficiency in high-power operation of high-frequency silicon-on insulator-LDMOS transistors. Identical transistors are studied on substrates with different resistivities. Using computational load pull, their high-power performance is evaluated. The results are compared to previous investigations, relating the OFF-state out put resistance to high-efficiency operation. From the large-signal simulation, an output circuit model based on a load-line match is extracted with parameters traceable from small-signal simu lations. It is shown that, albeit high OFF-state output resistance is a good indication, it is not sufficient for high efficiency in a high-power operation. The bias and frequency dependence of the coupling through the substrate makes a more detailed ON-state analysis necessary. It is shown that very low resistivity and high resistivity SOI substrates both result in a high efficiency at the studied frequency and bias point. It is also shown that a normally doped medium-resistivity substrate results in a significantly lower efficiency.

Place, publisher, year, edition, pages
IEEE , 2009. Vol. 56, no 3, p. 505-511
Keywords [en]
LDMOS, RF power, silicon-on-insulator (SOI)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:hig:diva-3692DOI: 10.1109/TED.2008.2011848ISI: 000264019300019Scopus ID: 2-s2.0-62749086718OAI: oai:DiVA.org:hig-3692DiVA, id: diva2:158862
Available from: 2009-02-04 Created: 2009-02-04 Last updated: 2018-03-13Bibliographically approved

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Bengtsson, Olof

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