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Chemical vapour deposition of molybdenum carbides: aspects of phase stability
Department of Inorganic Chemistry, Ångström Laboratory, University of Uppsala, Box 538, S-751 21 Uppsala, Sweden.
Condensed Matter Theory Group, Department of Physics, University of Uppsala, Box 530, S-751 21, Uppsala, Sweden.ORCID iD: 0000-0001-8748-3890
Condensed Matter Theory Group, Department of Physics, University of Uppsala, Box 530, S-751 21, Uppsala, Sweden.
Condensed Matter Theory Group, Department of Physics, University of Uppsala, Box 530, S-751 21, Uppsala, Sweden.
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2000 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 370, no 1-2, p. 203-212Article in journal (Refereed) Published
Abstract [en]

Thin films of different molybdenum carbides (δ-MoC1−x, γ′-MoC1−x and Mo2C) have been deposited from a gas mixture of MoCl5/H2/C2H4 at 800°C by CVD. The H2 content in the vapour has a strong influence on the phase composition and microstructure. Typically, high H2 contents lead to the formation of nanocrystalline δ-MoC1−x films while coarse-grained γ′-MoC1−x is formed with an H2-free gas mixture. This phase has previously only been synthesized by carburization of Mo in a CO atmosphere and it has therefore been considered as an oxycarbide phase stabilized by the presence of oxygen in the lattice. Our results, however, show that γ′-MoC1−x films containing only trace amounts of oxygen can be deposited by CVD. Stability calculations using a FP-LMTO method confirmed that the γ′-MoC1−x phase is stabilized by oxygen but that the difference in energy between e.g. δ-MoC0.75 and oxygen-free γ′-MoC0.75 is small enough to allow the synthesis of the latter phase in the absence of kinetic constraints. Annealing experiments of metastable δ-MoC1−x and γ′-MoC1−x films showed two different reaction products suggesting that kinetic effects play an important role in the decomposition of these phases.

Place, publisher, year, edition, pages
Elsevier , 2000. Vol. 370, no 1-2, p. 203-212
Keywords [en]
Molybdenum carbide, Carbides, Chemical vapor deposition
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:hig:diva-40406DOI: 10.1016/s0040-6090(00)00750-1OAI: oai:DiVA.org:hig-40406DiVA, id: diva2:1710506
Available from: 2022-11-14 Created: 2022-11-14 Last updated: 2022-11-14Bibliographically approved

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Hugosson, Håkan Wilhelm

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