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  • 1.
    Lastras-Martínez, L. F.
    et al.
    Max-Planck-Institut Festkorperforschung, Stuttgart, Germany; Instituto de Investigación en Comunicación Optica, Universidad Autonóma de San Luis Potosí, San Luis Potosí, Mexico.
    Rönnow, Daniel
    Max-Planck-Institut Festkorperforschung, Stuttgart, Germany.
    Santos, P. V.
    Max-Planck-Institut Festkorperforschung, Stuttgart, Germany; Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.
    Cardona, M.
    Max-Planck-Institut Festkorperforschung, Stuttgart, Germany.
    Eberl, K.
    Max-Planck-Institut Festkorperforschung, Stuttgart, Germany.
    Optical anisotropy of (001)-GaAs surface quantum wells2001Inngår i: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 64, nr 24, s. 2453031-2453038, artikkel-id 245303Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We report a reflectance difference spectroscopy (RDS) study of the optical anisotropy of GaAs:(001) surface quantum wells consisting of a thin GaAs layer (3-30 nm thick) embedded between an arsenic reconstructed surface and an AlAs barrier. The RDS spectra display anisotropic contributions from the free surface and from the GaAs/AlAs interface. By comparing RDS spectra for the c(4×4) and (2×4) surface reconstructions, we separate these two contributions, and demonstrate that the anisotropy around the E1 and E11 transitions comprises a component originating from modifications of bulk states near the surface. The latter is attributed to anisotropic strains induced by the surface reconstruction. The experimental data are well described by a model for the RDS response of the multilayer structures, which also takes into account the blue energy shifts and the changes in oscillator strength of the E1 and E11 transitions induced by quantum-well confinement.

  • 2.
    Rönnow, Daniel
    et al.
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Cardona, M.
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Lastras-Martínez, L. F.
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Piezo-optical coefficients of ZnSe and ZnTe above the fundamental gap1999Inngår i: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 59, nr 8, s. 5581-5590Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The piezo-optical coefficients P11-P12 and P44 have been measured for ZnSe and ZnTe above the fundamental gap (in the energy ranges 2.6-5.5 eV and 2.0-5.5 eV, respectively) by using reflectance difference spectroscopy. The measured spectra of P11-P12 and P44 show good Kramers-Kronig consistency between their real and imaginary parts. Values for the deformation potentials D1 5, D3 3, and D3 5 for the E1 and E1 + Δ1 transitions were estimated by fitting the spectral dependence of P11-P12 and P44 to analytical line shapes based on a one-electron approximation.

  • 3.
    Rönnow, Daniel
    et al.
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Christensen, N. E.
    Institute of Physics and Astronomy, Århus University, Århus, Denmar.
    Cardona, M.
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Deformation potentials of the E1 transition in Ge, GaAs, InP, ZnSe, and ZnTe from ab initio calculations1999Inngår i: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 59, nr 8, s. 5575-5580Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The deformation potentials D1 1, D3 3, D1 5, and D3 5, which represent the effects of strain on the E1 electronic interband transitions, have been calculated for Ge, GaAs, InP, ZnSe, and ZnTe using the full-potential linear muffin-tin orbital method within the local-density approximation. These deformation potentials exhibit no strong variations between L and Γ throughout the Brillouin zone. It is therefore legitimate to use an average to interpret strain-optical experiments. The values of these deformation potentials are approximately the same for all calculated materials. The agreement with experimental data is good for Ge, GaAs, and InP. For ZnSe and ZnTe the agreement with the few extant experimental data is poorer: The magnitude of the calculated deformation potentials is smaller than found experimentally. This may reflect a breakdown of the conventional theory of strain optical constants based on one-electron interband transitions. The corresponding deformation potentials, D1,0 5 and D3,0 5, representing the effects of optical phonons at the center of the Brillouin zone on the E1 transitions are also presented.

  • 4.
    Rönnow, Daniel
    et al.
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Santos, P.
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Cardona, M.
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Anastassakis, E.
    Department of Physics, National Technical University, Athens, Greece.
    Kuball, M.
    Department of Physics, Brown University, Providence, United States.
    Piezo-optics of InP in the visible-ultraviolet range1998Inngår i: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 57, nr 8, s. 4432-4442Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The piezo-optical properties of InP above the fundamental gap have been investigated. Uniaxial stress was applied along the [001] and [111] crystal directions and spectroscopic ellipsometry was used to determine the piezo-optical coefficients P11 , P12, and P44 in the energy range 1.6-5.5 eV at room temperature. Deformation potentials were determined for the E1 and E1 + Delta(1) transitions. Semiempirical tight-binding calculations of the piezo-optical coefficients and deformation potentials are in reasonable agreement with experiment.

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