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  • 1.
    Cardona, M.
    et al.
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Rönnow, Daniel
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Santos, P. V.
    Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.
    Ellipsometric investigations of piezo-optical effects1998Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 313-314, s. 10-17Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    An introduction to the stress-induced birefringence of solids, with emphasis on cubic and amorphous materials, is given. Most available experimental data have been obtained in the frequency region below the electronic absorption edge: the corresponding coefficients of the stress-optical tensor are then real. Above the edge (and also in the IR region of the Reststrahlen) they become complex. Ellipsometry is an excellent tool for the investigation of complex stress-optical functions. It also yields the hydrostatic pressure induced changes in the dielectric functions. Data obtained recently for diamond and zincblende-type crystals and their theoretical interpretation are discussed.

  • 2.
    Kullman, L.
    et al.
    Department of Technology, Uppsala University, Uppsala, Sweden.
    Rönnow, Daniel
    Department of Technology, Uppsala University, Uppsala, Sweden.
    Granqvist, C. G.
    Department of Technology, Uppsala University, Uppsala, Sweden.
    Elastic Light Scattering and Electrochemical Durability of Electrochromic Tungsten-oxide-based Films1996Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 288, nr 1-2, s. 330-333Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Electrochromic W-oxide-based films were produced by reactive d.c. magnetron sputtering. Fluorination and substrate bias were used to modify the film properties. Spectral measurements of the total and diffuse light scattering showed that the diffuse component remained at much less than 1% in the visible, irrespective of electrochemical degradation, which is low enough for smart windows applications.

  • 3.
    Niklasson, Gunnar A.
    et al.
    Department of Materials Science, The Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Rönnow, Daniel
    Department of Materials Science, The Ångström Laboratory, Uppsala University, Uppsala, Sweden; Institute of Optical Research, Electrum, Kista, Sweden.
    Strömme, Maria
    Department of Materials Science, The Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Kullman, Lisen
    Department of Materials Science, The Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Nilsson, Hans
    Department of Materials Science, The Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Roos, Arne
    Department of Materials Science, The Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Surface roughness of pyrolytic tin dioxide films evaluated by different methods2000Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 359, nr 2, s. 203-209Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The scaling of surface roughness in thin spray pyrolyzed fluorinated tin dioxide films of different thicknesses was obtained from atomic force microscopy. The data show that, within experimental uncertainties, the effective dimensionality of the surface is 2; hence no evidence of fractal surface roughness was found. Other methods – based upon light scattering and cyclic voltammetry – gave additional information on the surface topography. Cyclic voltammetry measurements show that the reaction sites on the surface are distributed in a fractal structure and may be identified with hillocks seen in surface reliefs.

  • 4.
    Rönnow, Daniel
    et al.
    Max Planck Institut für Festkörperforschung, Stuttgart, Germany.
    Lindström, T.
    Department of Materials Science, Uppsala University, Uppsala, Sweden.
    Isidorsson, J.
    Department of Materials Science, Uppsala University, Uppsala, Sweden.
    Ribbing, C.-G.
    Department of Materials Science, Uppsala University, Uppsala, Sweden.
    Surface roughness of oxidised copper films studied by atomic force microscopy and spectroscopic light scattering1998Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 325, nr 1-2, s. 92-98Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The interface roughness of Cu2O films produced by thermal oxidation of Cu was studied by spectroscopic elastic light scattering and atomic force microscopy. No correlation could be found between the roughness of the two interfaces, although the amplitude and the length scale of the roughness changed in the same way with film thickness for both interfaces. Both interfaces were found to have a fractal dimension of two. A first order perturbation theory was used to analyse the light scattering data; theory and experiment are in good agreement within the limits of the theory.

  • 5.
    Rönnow, Daniel
    et al.
    Racomna AB, Uppsala, Sweden.
    Veszelei, E.
    Racomna AB, Uppsala, Sweden.
    Bruce, S.
    Racomna AB, Uppsala, Sweden.
    Isidorsson, J.
    Faculty of Sciences, Division of Physics and Astronomy, Vrije Universiteit, Amsterdam, The Netherlands.
    Yttrium hydride layer with switchable microwave properties2004Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 467, nr 1-2, s. 186-189Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We report on switching properties in the microwave region of yttrium hydride. A microstrip line of gold on a quartz substrate was used. A gap in the gold had an yttrium hydride layer of 1.0 ÎŒm thickness with a cap layer of 5 nm palladium and 2 nm aluminium oxide. The yttrium hydride was switched between a metallic and a semiconducting state with the exchange of hydrogen. The transmission (S21) and reflection (S11) coefficients were measured in the range 10 MHz-20 GHz. In the metallic state, the sample works like a microwave transmission line and in its semiconducting state, like a microwave resistor. The transmission coefficient was also measured at 5.0 GHz during hydrogenation and de-hydrogenation.

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